Vinsamlegast notið þetta auðkenni þegar þið vitnið til verksins eða tengið í það: http://hdl.handle.net/1946/3053
Growth and electrical characterization of thin ﬁlm silicon on MG-Si for solar cell applications
Thin ﬁlms of silicon for solar cell applications were grown by liquid phase epitaxy (LPE). The ﬁlms were grown on semi-insulating single-crystalline silicon, p-type single-crystalline silicon and metallurgical grade silicon (MG-Si). MG-Si substrates have higher impurity concentrations than traditional electronic grade silicon and are used as low-cost alternatives to single crystalline substrates. p-n junctions were prepared by growing n-type silicon on p-type MG-Si substrates. The as-grown samples were hydrogenated to improve their electrical quality. Electrical characterization along with a morphology study was made on the grown samples. It was demonstrated that it is possible to produce a low-cost solar cell using metallurgical grade silicon substrates. However, hydrogenation is essential to achieve the desired electrical properties.