Vinsamlegast notið þetta auðkenni þegar þið vitnið til verksins eða tengið í það: http://hdl.handle.net/1946/18880
The need for an alternative to the prevailing Si based semiconductor devices is ever present, since the Si devices are fast approaching their limits. Some effort has gone into the study of SiC based devices in the past 20 years or so as an alternative for high power applications. However the SiC/SiO_2 interface has presented a number of challenges, due to the large number of interface traps. In this project we characterized these traps using three different capacitance-voltage measurement techniques on four different MOS - Capacitors, and found that most of these traps are present near the interface itself. One of the devices we looked at had been oxidized using a sodium enhanced oxidation process, which neutralizes most of the interfacial traps.