Vinsamlegast notið þetta auðkenni þegar þið vitnið til verksins eða tengið í það: http://hdl.handle.net/1946/29517
This thesis presents a study of vanadium sesquioxide thin films grown with magnetron sputtering on c-plane sapphire substrates. Effects of the growth conditions on the structural parameters and metal-insulator phase transition which occurs in the material are explored and characterized. The results show a large range of temperature and oxygen flow rates during growth that produce high quality epitaxial films. However, the transition is strongly dependent on the oxygen partial pressure, ranging from five orders of magnitude to a stabilized metallic phase. The scale of the transition along with the transition temperature correlate to the stoichiometry and local strain in the films.